论文标题

单层WTE2螺旋边缘中的磁接近度和非进型电流切换

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

论文作者

Zhao, Wenjin, Fei, Zaiyao, Song, Tiancheng, Choi, Han Kyou, Palomaki, Tauno, Sun, Bosong, Malinowski, Paul, McGuire, Michael A., Chu, Jiun-Haw, Xu, Xiaodong, Cobden, David H.

论文摘要

通常通过寻找包含成分的材料或通过对对比材料的分层生长来研究各种电子现象(例如磁性和非平凡拓扑结构)中的各种电子现象的整合。在亲密接触中简单地堆叠截然不同的二维(2D)范德华材料的能力允许一种不同的方法。在这里,我们使用这种方法将螺旋边缘循环在2D拓扑绝缘子Monolayer WTE2中与2D层次的抗Fiferromagnet cri3。我们发现边缘电导对CRI3的磁化态敏感,并且可以通过从最近和下一个最新的CRI3层的交换场来理解耦合,从而在螺旋边缘产生间隙。我们还发现,非线性边缘电导取决于最近CRI3层相对于电流方向的磁化。在低温下,这会产生非常大的非偏射电流,该电流通过更改CRI3的抗磁性状态而被切换。

The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approach to couple the helical edges states in a 2D topological insulator, monolayer WTe2, to a 2D layered antiferromagnet, CrI3. We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3.

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