论文标题
范德华异质结构中层分辨的磁接近效应
Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
论文作者
论文摘要
磁接近效应是异质结构中工程旋转,超导和拓扑现象的重要成分。此类效应对界面电子特性高度敏感,例如电子波函数重叠和带对齐。范德华(VDW)磁铁的最新出现使通过设计具有原子清洁界面的异质结构来调整接近效应的可能性。特别是,原子上的CRI3表现出分层的抗铁磁性,在那里相邻的铁磁单层是抗铁磁性耦合的。利用这种磁性结构,我们发现了由单层WSE2和BI/TRILAYER CRI3形成的异质结构中层分辨的磁接近效应。通过用磁场控制CRI3中的单个层磁化,我们发现WSE2和CRI3之间的自旋依赖性电荷转移由界面CRI3层主导,而接近交换场对整个分层磁结构高度敏感。这些特性使我们能够将单层WSE2用作空间敏感的磁传感器,以绘制零磁场上的分层抗磁磁体结构结构,以及在Bilayer CRI3中的Spin-Flip Transition附近的抗铁磁/铁磁域附近。我们的工作揭示了一种通过VDW工程来控制接近效应和探测界面磁性顺序的新方法。
Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.