论文标题
在硅上生长的N型和P型立方硅碳化物（3C-SIC）的欧姆接触
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
论文作者
论文摘要
本文是关于N型和P型型立方硅碳化物（3C-SIC）层的欧姆接触报告的报告。特别是，已经研究了使用多种表征技术的退火Ni和Ti/al/ni接触的形态，电和结构特性。在950°C下退火的Ni膜在适度的N型3C-SIC（ND〜1x1017cm-3）上形成欧姆接触，其特定接触电阻为3.7x10-3ΩCM2。在这种接触中退火时形成的主相是镍硅（Ni2si），在反应层中随机分散碳。在具有高掺杂水平（Na〜5x1019cm-3）的P型3C-SIC的情况下，Ti/Al/ni接触比NI优于NI，因为它们给出了特定的接触电阻值较低的值（1.8x10-5ΩCM2）。在这里，在接触的最上部形成了Al3Ni2层，而在接口处检测到TIC。对于该系统，允许温度依赖的电特性表征确定热场发射规则界面处的电流传输。所有这些结果对于基于3C-SIC多型的设备技术的进一步开发都可能有用。
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950°C form Ohmic contacts on moderately n-type doped 3C-SiC (ND ~ 1x1017cm-3), with a specific contact resistance of 3.7x10-3 Ωcm2. The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (NA ~ 5x1019cm-3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8x10-5 Ωcm2). Here, an Al3Ni2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a devices technology based on the 3C-SiC polytype.
