论文标题
Si（111）表面的PB岛的膜厚度
Film thickness of Pb islands on the Si(111) surface
论文作者
论文摘要
我们将地形扫描力显微镜图像与在PB岛和Si（111）上的润湿层获得的Kelvin探针图像一起分析了地形扫描力显微镜图像（111）。在润湿层中，我们观察到带负电荷的Si-Rich区域。我们证明了这些富裕地区是由于岛屿而由于岛屿而消失的岛屿而导致的。我们认为这些岛屿位于润湿层内部的Si富区域，因此岛屿的PB/Si界面与湿层的顶部一致，而不是与基板的界面相一致。我们建议PB Island Heights是一个原子层的一个比以前认为的要小。对于在该系统中观察到的工作函数的量子尺寸效应双层振荡，我们得出结论，对于9个原子层以下的膜厚度，功能的较大值对应于偶数单层数量的单层而不是奇数。原子上精确的岛屿高度对于了解该系统中的超快“爆炸性”岛增长很重要。
We analyze topographic scanning force microscopy images together with Kelvin probe images obtained on Pb islands and on the wetting layer on Si(111) for variable annealing times. Within the wetting layer we observe negatively charged Si-rich areas. We show evidence that these Si-rich areas result from islands that have disappeared by coarsening. We argue that the islands are located on Si-rich areas inside the wetting layer such that the Pb/Si interface of the islands is in line with the top of the wetting layer rather than with its interface to the substrate. We propose that the Pb island heights are one atomic layer smaller than previously believed. For the quantum size effect bilayer oscillations of the work function observed in this system, we conclude that for film thicknesses below 9 atomic layers large values of the work function correspond to even numbers of monolayers instead of odd ones. The atomically precise island height is important to understand ultrafast "explosive" island growth in this system.
