论文标题
高温退火（t> 1650°C）对P型植入4H-SIC层的形态和电性能的影响
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
论文作者
论文摘要
这项工作报告了高温退火对植入P型4H-SIC的电气性能的影响。进行了不同能量（30-200 keV）的铝（Al）的离子植入，以实现300 nm厚的受体盒剖面，浓度约为1020 at/cm3。在高温（1675-1825°C）下退火植入的样品。对退火样品的形态分析显示，在1775°C的表面粗糙度RMS仅略有增加，而在1825°C时，这种增加变得更加显着（RMS = 1.2nm）。室温大厅的测量结果导致孔浓度在0.65-1.34x1018/cm3范围内，迁移率值为21-27 cm2v-1s-1。温度依赖性的电测量值允许估计AL植入物的激活能量约为110 MeV（用于在1675°C下的植入后退火），而有源P型Al型在39％和56％之间的活性P型Al型含量。结果为制造4H-SIC JB和MOSFET提供了有用的指示。
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675-1825 °C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775°C, while this increase becomes more significant at 1825°C (RMS=1.2nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34x1018/cm3 and mobility values in the order of 21-27 cm2V-1s-1. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675°C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.
