论文标题
Luttinger Hamiltonian的Floquet工程
Floquet engineering of the Luttinger Hamiltonian
论文作者
论文摘要
在定期驱动的量子系统的Floquet理论中,我们在Luttinger Hamiltonian描述的半导体材料中开发了光诱导的电子状态修饰理论(电子期限$γ_8$)。特别是,在线性和循环极化照射的情况下,发现了浮雕问题的精确溶液。结果表明,辐射会改变带边缘附近的电子有效质量,诱导电子分散体的各向异性并拆分频带。证明光诱导的带分裂很大程度上取决于光极化。也就是说,圆两极的光与固定磁场相似,并提起电子分支的自旋变性,而线性极化的光不会影响自旋退化,而只能将频带拆分在Brillouin区中心。目前的理论可以应用于描述广泛频率范围内电磁场辐照的各种半导体结构的电子特性。
Within the Floquet theory of periodically driven quantum systems, we developed the theory of light-induced modification of electronic states in semiconductor materials described by the Luttinger Hamiltonian (the electronic term $Γ_8$). Particularly, exact solutions of the Floquet problem are found for the band edge in the cases of linearly and circularly polarized irradiation. It is shown that the irradiation changes electron effective masses near the band edge, induces anisotropy of the electron dispersion and splits the bands. It is demonstrated that the light-induced band splitting strongly depends on the light polarization. Namely, the circularly polarized light acts similarly to a stationary magnetic field and lifts the spin degeneracy of electron branches, whereas a linearly polarized light does not affect the spin degeneracy and only splits the bands in the center of the Brillouin zone. The present theory can be applied to describe electronic properties of various semiconductor structures irradiated by an electromagnetic field in the broad frequency range.