论文标题
迈向现实的GAAS旋转量子设备，用于经典错误校正量子存储器
Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory
论文作者
论文摘要
基于数值优化的实磁门门和参数，我们研究了轴承（GAAS）量子点的线性阵列上的相叉（重复）代码的性能。我们首先使用电路级别和现象学噪声的简单误差模型检查代码的预期性能，例如，报告的电路级去极化噪声阈值约为3％。然后，我们使用最大样本和最小匹配的解码器进行密度 - 矩阵仿真，以研究真实设备的dephasing，读取误差，准静态以及快速的门噪声的效果。考虑到量子读数误差与逐步读取时间（T2）之间的权衡，我们确定了位于实验范围范围内的相纤利代码的子阈值区域。
Based on numerically-optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of Gallium Arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, read-out error, quasi-static as well as fast gate noise. Considering the trade-off between qubit read-out error and dephasing time (T2) over measurement time, we identify a sub-threshold region for the phase-flip code which lies within experimental reach.
