论文标题
BI掺杂的N型Si中自旋 - 泵诱导的旋转旋转效应的研究
Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
论文作者
论文摘要
当传导电子散布在需要次的自旋轨道上时，通过实验观察到N型硅中的旋转霍尔效应（ISHE）。硅层中的自旋电流是通过在沉积在由磷光器和二木掺杂的Si层上的薄薄薄层（PY）层中的磁力谐振（PY）层中的磁化进动的激发而产生的。从沿[011]或[100]晶体轴对齐的不同PY/N-SI的直流电压的角依赖性：我们能够区分平面霍尔效应（PHE）和ISHE贡献。 ISHE直流电压信号与[011]晶体轴对齐的结构和[100]方向的sinθ*cos2θ的结构成正比。另外，观察到与SIN2θ相对的角度观察到的PHE DC电压。这意味着对于硅作为多谷半导体，由于浅供体在N型材料中引起的自旋轨道电位引起的自旋势散射取决于山谷轴相对于磁场方向的方向。
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to sinθ*sin2θ product for the structure aligned to the [011] crystal axis and to sinθ*cos2θ for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to the sin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.
