论文标题
单层MOS的缺陷状态$ _2 $
Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$
论文作者
论文摘要
河谷伪植物中的二维（2D）过渡金属二盐元素（TMDS）允许光学控制自旋 - 谷利极化和Intervalley量子相干性。 TMD中的缺陷状态引起了新的激子特征，理论上表现出旋转谷物极化。但是，这种现象的实验成就仍然是挑战。在这里，我们报告了CVD生长的单层MOS2中缺陷结合的局部激子的明确谷化拟人；观察到有效的G因子为-6.2，增强的山谷Zeeman分裂。我们的结果表明，所有五个D轨道和增加的有效电子质量都导致了缺陷状态的带移，这证明了与抗震动子的磁反应的新物理学有关。我们的作品为操纵自由度的自由度通过朝向Valleytronic设备的缺陷铺平了道路。
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.
