论文标题
超薄氧化物异质结构的界面上的晶格不稳定性
Coupling lattice instabilities across the interface in ultrathin oxide heterostructures
论文作者
论文摘要
氧化物异源构成了一个丰富的平台,用于实现冷凝物质中的新功能。一个关键方面是结构和电子特性之间的牢固联系,可以通过与不同的晶格对称性接口材料进行修改。在这里,我们确定了$ \ text {srtio} _3 $的立方四方失真对$ \ text {sriro} _3 $的薄膜的电子性能的效果,一种拓扑结晶金属,托管一个微妙的相互作用,在旋转 - 轨道量和电子矛盾之间进行了微妙的相互作用。我们证明,在105 K处的过渡温度以下,$ \ text {sriro} _3 $ orthorhombic域直接将夫妇直接送到$ \ text {srtio} _3 $中的四方域。这迫使内相旋转轴内置面板,并在$ \ text {sriro} _3 $胶片中创建二进制域结构。在超薄$ \ text {sriro} _3 $中,与金属 - 绝缘体过渡的近距离近距离导致各个域具有强烈的各向异性传输属性,这是由于沿着同相轴的带宽降低而驱动的。钙钛矿中的强结构特性关系使这些化合物特别适合在接口处进行静态和动态耦合,从而提供了实现氧化物异质结构中新功能的有前途的途径。
Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\text{SrIrO}_3$ orthorhombic domains couple directly to tetragonal domains in $\text{SrTiO}_3$. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the $\text{SrIrO}_3$ film. The close proximity to the metal-insulator transition in ultrathin $\text{SrIrO}_3$ causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.