论文标题
带有连贯的自旋控制的单硅碳化物颜色中心的Purcell增强
Purcell enhancement of a single silicon carbide color center with coherent spin control
论文作者
论文摘要
碳化硅最近已开发为光学可寻址旋转缺陷的平台。特别是，4H多型中的中性分裂显示出光学上可寻址的自旋-1接地状态和近红外光学发射。在这里，我们介绍了与光子晶体腔耦合的单个中性分区的Purcell增强。我们利用纳米光刻技术和掺杂型光电化学蚀刻的组合来产生悬浮的空腔，质量超过5,000。随后的耦合到单个分区的耦合导致大约50个percell因子，这表现为增强的光致发光到零 - 音波线中，并且缩短了激发态寿命。此外，我们测量了对空腔纳米结构内部态态自旋的相干控制，并通过动力学去耦表现出扩展的连贯性。这种自旋腔体系统代表了使用碳化硅碳化物朝着可扩展的长距离纠缠方案的进步，该碳化物需要干扰与空间分离的单量子器的不可区分的光子。
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
