论文标题
准2D电荷密度波1T-TAS2设备中的当前振荡：重新审视“狭窄的频带噪声”概念
Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
论文作者
论文摘要
我们报告了准二维（2D）1T-TAS2电荷密度波的当前振荡。振荡的MHz频率范围以及振荡频率对电流的频率的线性依赖性非常类似于“窄带噪声”，通常在经典的散装量质量（1D）Trichalcogenide电荷电荷密度密度 - 波密度材料中观察到。在批量准1D材料中，“窄带噪声”被解释为电荷密度滑动的直接证据。尽管有相似之处，但我们认为，准2d 1T-TAS2中MHz振荡的性质与“窄带噪声”不同。对偏置条件和电流的分析表明，由于电压诱导的从几乎相称的电荷密度波相引起的过渡，观察到的振荡与当前不稳定性有关。
We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the "narrow band noise" was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the "narrow band noise." Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.
