论文标题
单电子电路的随机步行基准
A random-walk benchmark for single-electron circuits
论文作者
论文摘要
实现基本量子系统高保真控制的介观综合电路需要基准测试的新方法。我们提供了电路级的统计描述，该描述是按照按需电子传输的通用随机步行模型的稀有误差积累。对于高保真单电子电路，在实验中是GAAS/Algaas异质结构中的量子点链实现的，通过电荷计数探测了传输操作的误差。电子班车的额外错误（$ p _+$）或缺少（$ p _- $）电子的错误率是$ p _ { - } =（6.92 \ pm 0.14）\ times 10^{ - 5} $和$ p _ {+p _ {+} =（2.13 \ pm 0.08）\ times 10^$ corre correl corre correct correl。此外，对随机步行时间的准确控制可以随着时钟频率的增加而探索记忆的作用。
Mesoscopic integrated circuits achieving high-fidelity control of elementary quantum systems require new methodology for benchmarking. We offer circuit-level statistical description of rare-error accumulation in terms of a universal random-walk model for on-demand electron transfer. For a high-fidelity single-electron circuit, realized in the experiment as a chain of quantum dots in a GaAs/AlGaAs heterostructure, the error of the transfer operation is probed by charge counting. Error rates for extra ($P_+$) or missing ($P_-$) electrons of the electron shuttle are measured to $P_{-}=(6.92 \pm 0.14) \times 10^{-5}$ and $P_{+}=(2.13 \pm 0.08)\times 10^{-5}$ with uncertainty due to correlated noise in the environment. Furthermore, precise control over the timing of the random walk allows to explore the role of memory as the clock frequency is increased.
