论文标题
分层磁化合物MNSB2TE4中的拓扑相变:自旋 - 轨耦合和层间耦合依赖
Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces
论文作者
论文摘要
基于第一原理的计算和理论分析,我们研究了电子结构,拓扑相变(TPT)以及分层磁化合物MNSB2TE4的拓扑特性。它具有与磁性绝缘体MNBI2TE4相似的晶体和磁性结构。我们发现,当考虑自旋轨道耦合(SOC)时,抗铁磁(AFM)状态中MNSB2TE4的带状结构在γ下没有带反转。这是由于SB的SOC强度小于BI的强度。可以通过将SB的SOC增加0.3倍来实现频段反转,从而将MNSB2TE4从琐碎的AFM绝缘子驱动到AFM拓扑绝缘子(TI)或Axion绝缘子。沿层堆叠方向的单轴压缩应变是控制频带反转的另一种方法。乘层间距离缩短5%以驱动相似的TPT。对于具有实验晶体结构的铁磁(FM)MNSB2TE4,它是正常的FM绝缘子。当SOC增强0.1倍或层间距离降低超过1%时,频段反转可能发生。因此,可以将FM MNSB2TE4调用为最简单的I型Weyl半学,在三倍旋转轴上只有一对Weyl节点。这两个Weyl节点被投影到(1-10)表面,其中一个Fermi弧连接它们。
Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magnetic structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2Te4 in antiferromagnetic (AFM) state has no band inversion at Γ. This is due to the SOC strength of Sb is less than that of Bi. The band inversion can be realized by increasing the SOC of Sb by 0.3 times, which drives MnSb2Te4 from a trivial AFM insulator to an AFM topological insulator (TI) or axion insulator. Uniaxial compressive strain along the layer stacking direction is another way to control the band inversion. The interlayer distance shorten by 5% is needed to drive the similar TPT. For the ferromagnetic (FM) MnSb2Te4 with experimental crystal structure, it is a normal FM insulator. The band inversion can happen when SOC is enhanced by 0.1 times or the interlayer distance is decreased by more than 1%. Thus, FM MnSb2Te4 can be tuned to be the simplest type-I Weyl semimetal with only one pair of Weyl nodes on the three-fold rotational axis. These two Weyl nodes are projected onto (1-10) surface with one Fermi arc connecting them.