论文标题
朝着Si/Sige的两个电荷量子位之间的电容介导的CNOT迈进
Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe
论文作者
论文摘要
快速操作，易于调谐的哈密顿量以及直接的两分点相互作用使电荷量子台成为基准设备性能和探索两Q量化动力学的有用工具。在这里，我们调整一个由四个Si/Sige量子点组成的线性链，以容纳两个双点电荷量子。利用双点之间的电容介导强度的两数分相互作用，我们同时驱动连贯的转变以在量子位之间产生相关性。然后，我们将Qubits依次脉动，以在另一个状态上有条件地驱动一个Qubit。我们发现，有条件的$π$ - 旋转只能以74 ps驱动，而富裕性则可以证明具有13.5 GHz Clockspeed的两Q Q Quibit操作的可能性。
Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.
