论文标题

稀磁半导体(CA,NA)(Zn,Mn)2SB2中的临界点行为异常

Anomalous critical point behavior in dilute magnetic semiconductor (Ca,Na)(Zn,Mn)2Sb2

论文作者

Yu, Shuang, Liu, Xinyu, Zhao, Guoqiang, Peng, Yi, Wang, Xiancheng, Zhao, Jianfa, Li, Wenmin, Deng, Zheng, Furdyna, Jacek K., Uemura, Y. J., Jin, Changqing

论文摘要

在本文中,我们报告了(Ca,na)(Zn,Mn)2SB2作为新的铁磁稀释磁性半导体(DMS)的成功合成和磁性。在这种DMS材料中,可以独立于与这些矩之间介导磁相互作用所需的电荷载载流子的浓度来控制磁矩的浓度。此功能使我们能够分别研究载体和旋转对这种新DMS合金的铁磁特性的影响,尤其是关键铁磁行为的影响。我们使用修改后的Arott图技术来建立该合金的关键指数B,G和D。我们发现,在低Mn浓度(<10 at。%)下,它受短距离3D-andis行为的控制,B,G和D的实验值非常接近理论3D-Asistion值为0.325、1.24和4.815。但是,随着MN浓度的增加,该DMS材料表现出混合相的行为,G保留了其3D呈现特征,但B越过长期均值平均场行为。

In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot technique to establish critical exponents b, g, and d of this alloy. We find that at low Mn concentrations (< 10 at.%), it is governed by short-range 3D-Ising behavior, with experimental values of b, g, and d very close to theoretical 3D-Ising values of 0.325, 1.24, and 4.815. However, as the Mn concentration increases, this DMS material exhibits a mixed-phase behavior, with g retaining its 3D-Ising characteristics, but b crossing over to longer-range mean-field behavior.

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