论文标题
Epigraphene Hall传感器的性能限制
The performance limits of epigraphene Hall sensors
论文作者
论文摘要
碳化硅（碳化硅）上的外延石墨烯（Epigraphene）在高电气质量和可扩展性方面为Hall感应设备提供了一个绝佳的平台。然而，迄今为止，控制其载体密度的挑战阻止了对层次霍尔传感器性能的系统研究。在这项工作中，我们调查了使用分子掺杂在狄拉克点上掺杂的杂烯霍尔传感器。根据载体密度的不同，分子掺杂的表皮霍尔传感器达到室温敏感性$ s_v = 0.23 v/vt $，$ s_i = 1440 v/at $ and磁场检测限制至$ b_ {min} = 27 $ nt/\ sqrt {hz} $ at 20 khz。热稳定的设备可展示运行最多$ t = 150 $ $^oc $，$ s_v = 0.12 v/vt $，$ s_i = 300 v/at $ and $ b_ {min} \ 100 $ $ $ nt/\ sqrt {hz} $ 20 kHz。
Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities $S_V=0.23 V/VT$,$S_I=1440 V/AT$ and magnetic field detection limits down to $B_{MIN}=27$ $nT/\sqrt{Hz}$ at 20 kHz. Thermally stabilized devices demonstrate operation up to $T=150$ $^oC$ with $S_V=0.12 V/VT$, $S_I=300 V/AT$ and $B_{MIN}\approx 100$ $nT/\sqrt{Hz}$ at 20 kHz.
