论文标题
来自2D/3D Van der waals界面的栅极可调半导体异缘
Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
论文作者
论文摘要
范德华（VDW）半导体对于高度尺度的设备和异质整合具有吸引力，因为它们可以分离成自passived的二维（2D）层，从而实现上静电控制。这些属性导致了从晶体管到三座的田野效应设备的众多演示。通过利用共价键入的三维（3D）半导体和2D半导体的钝化表面中的受控的替代掺杂方案，可以构建可以超过“ All-2D'VDW vdw vdw vdw heterojunctions的性能指标的设备。在这里，我们证明了使用MOS2作为典型的2D半导体，将2D/3D半导体异缘构成SI和GAN作为3D半导体层。通过调整MOS2中的费米水平，我们演示了在整流比和电导率上同时显示七个数量级调制的设备。我们的结果进一步表明，接口质量不一定会影响Fermi级的调整，即打开新型2D/3D异质结构架构的可能性。
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.
