论文标题
具有磁性接近效应的一维通道中的巨型门控制奇数磁力
Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect
论文作者
论文摘要
根据Onsager的原理，通用导体的电阻$ r $表现是外部磁场$ b $的均匀功能。只有在特殊情况下，涉及时间逆转对称（TRS）被铁磁性破裂，才观察到$ r $的奇数组成部分。这种不寻常的现象，称为奇数磁力（OMR），迄今为止是微妙的（<2％），很难通过外部手段控制。在这里，我们报告了INAS量子井的边缘传输通道中的巨大OMR，这是通过基础铁磁半导体（GA，FE）SB层的接近效应磁化的。使用线性化玻尔兹曼方程组合实验结果和理论分析，我们发现，通过磁接近效应（MPE）和空间反演对称性（SIS）同时破坏TR，在一维（1d）Inas边缘通道中同时破坏TRS。我们还证明了使用边缘通道中TRS或SIS的电控能打开和关闭OMR的能力。这些发现为具有强磁耦合的1D半导体系统提供了深入的见解。
According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann's equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling.
