论文标题
搭扣蜂窝组 - $ V $ - $ S_6 $对称$（D-2）$高订单拓扑绝缘子
Buckled honeycomb group-$V$--$S_6$ symmetric $(d-2)$ higher order topological insulators
论文作者
论文摘要
高阶拓扑绝缘子（HOTI）是$ d $ - 空间尺寸系统，其具有拓扑保护的差距状态为$（D-N）$ - 尺寸边界。借助\ textIt {ab-initio}计算和紧密的绑定模型以及对称考虑因素，我们表明，单层扣蜂窝结构（sb，as）已合成，已经合成，属于该类别，属于该类别，并具有$ \ frac {e}的范围，以及在$ \ frac {e}的范围内，以及在e 2}的范围内，以及在e}的范围内，以及在e}的范围内{e} {e 2} {e 2} {e} {2反转操作将该系统分类为四极拓扑绝缘子。
Higher Order Topological Insulators (HOTI) are $d$-spatial dimensional systems featuring topologically protected gap-less states at their $(d-n)$-dimensional boundaries. With the help of \textit{ab-initio} calculations and tight binding models along with symmetry considerations we show that monolayer buckled honeycomb structures of group-V elements (Sb,As), which have already been synthesized, belong in this category and have a charge fractionalization of $\frac{e}{2}$ at the corner states as well as weak topological edge states, all protected by their properties under the inversion operation which classify this system as a quadrupole topological insulator.
