论文标题

铸造式二维量子阵列中的单电子控制

Single-electron control in a foundry-fabricated two-dimensional qubit array

论文作者

Ansaloni, Fabio, Chatterjee, Anasua, Bohuslavskyi, Heorhii, Bertrand, Benoit, Hutin, Louis, Vinet, Maud, Kuemmeth, Ferdinand

论文摘要

硅自旋量子位已经达到了高保真的一分门和两倍的门,高于误差校正阈值,这有望实现耐断层量子计算的工业途径。开发可扩展多数处理器的重要下一步是Foundry-Fabricated,可扩展的二维(2D)阵列的操作。在砷耐加仑中,2D量子点阵列最近允许相干旋转操作和量子模拟。在硅中,2D阵列仅限于多电子制度中的运输测量。在这里,我们在少数电子方案中操作一个铸造的硅2x2阵列,在四个栅极定义的量子点中的每个量子中都能实现单电子占用,以及具有可调隧道耦合的可重新配置的单,双,双点和三个点。脉冲门和栅极反射测量技术允许单电子操作和单发电荷读数,而二维允许电子对的空间交换。这种阵列的紧凑型形状因子可以将其铸造式制造扩展到较大的2xN阵列,以及最近的相干自旋控制和读数的演示,为量子计算和仿真的密集量子阵列铺平了道路。

Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation.

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