论文标题
黑色磷和金电极之间界面处的带隙重建
Band gap reconstruction at the interface between black phosphorus and a gold electrode
论文作者
论文摘要
我们通过实验研究通过金电极和黑磷单晶之间的界面进行电荷传输。实验$ DI/DV（V）$曲线的特征是发达的零偏置电导峰和两个强烈不同的分支。我们发现，不对称$ di/dv（v）$曲线的两个分支对应于不同的带隙限制，这与电场下黑磷表面的理论上预测的带隙重建是一致的。通过与窄间隙（WTE $ _2 $）和宽间隙（GASE）金属 - 气门导体结构的对称曲线进行实验比较来证实这一结论。此外，我们在不同符号的高偏置电压下证明了p型掺杂剂的重新分布，这为在电阻内存应用中使用了黑色磷的界面结构开辟了一种方法。
We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications.
