论文标题
界面驱动的巨型隧道磁磁力（111）为导向的连接
Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions
论文作者
论文摘要
从理论上讲，我们在（111）面向连接co/mgo/co（111）和ni/mgo/ni（111）中研究了隧道磁阻（TMR）效应。基于CO的交界处的TMR比率超过2000美元$ \％$，这比基于NI的订单高。高TMR比率归因于界面的共振效应：界面$ d $ - $ p $ p $ antibonding状态在多数旋转渠道接近费米水平，并且两个界面中的这些状态相互共鸣。这与Fe（CO）/MGO/FE（CO）（CO）（001）中高TMR比的常规相干隧道机制基本不同。
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).
