论文标题
电气自旋注入到INGAAS/GAAS量子井中：通过溅射和分子束外延生长的MGO隧道屏障之间的比较
Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
论文作者
论文摘要
得益于COFEB/MGO自旋注射器，证明了向INGAAS/GAAS量子发光二极管进行有效的电旋转注射。纹理的MGO隧道屏障由两种不同的技术制造：溅射和分子束外延（MBE）。两种方法的最大自旋注射效率都是可比的。另外，还研究了两种样品的退火效果。这两个样品都显示出相同的趋势：随着退火温度的升高，电致发光圆极化（PC）的增加，然后PC的饱和度超过350°C。由于PC的增加远低于整个COFEB散装层的结晶温度，因此这种趋势可能主要是由于顶部COFEB/MGO界面的化学结构改善。这项研究表明，COFEB/MGO界面的控制对于最佳的自旋注射至半导体至关重要。
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.
