论文标题
超越扰动制度的GAA中的高谐波一代
High-harmonic generation in GaAs beyond the perturbative regime
论文作者
论文摘要
我们通过实验研究反射几何形状中大量芳香胺中高谐波产生的现场强度依赖性。我们发现在高场不再具有扰动缩放法律的振荡行为。通过基于Luttinger-Kohn模型构建理论框架，我们成功地重现了观察到的振荡行为。实验与理论之间的定性一致性表明，场诱导的动态谱带修饰在非扰动制度中至关重要。我们根据基于Floquet子带图的动态定位来考虑振荡行为的起源。
We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.
