论文标题
深层增益层和碳输注对LGAD辐射硬度的影响
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
论文作者
论文摘要
在用1 MeV中子辐照之前和之后，测试了由Hamamatsu Photonics（HPK）和Fondazione Bruno Kessler（FBK）生产的50 UM厚的低增益雪崩二极管（LGAD）探测器。使用来自90SR源和电容 - 电压扫描（C-V）的B粒子在电荷收集研究中测量其性能，以确定耗尽增益层的偏差。 FBK在UFSD3生产中测试了对传感器增益层的碳输液。相反，HPK产生的LGAD具有非常薄，高度掺杂且深度繁殖层的LGAD。将传感器暴露于4E14 NEQ/CM2到4E15 NEQ/CM2的中子通量。测量了收集的电荷和定时分辨率作为-30C时偏置电压的函数，此外，测量了传感器电压上电容的轮廓。
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.
