论文标题
超薄晶体上的去角质石墨烯中的形态和磁传输\ b {eta} -si3n4（0001）/si（111）
Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)
论文作者
论文摘要
我们报告了在\ b {eta} -si3n4（0001）/si（111）上转移的石墨烯的首次实验研究。我们的工作提供了对超薄SI3N4物理学的全面定量理解，作为基于石墨烯的设备的栅极介电。 SI3N4膜在超高真空（UHV）条件下在SI（111）上生长，并通过扫描隧道显微镜（STM）进行研究。随后，通过基于聚合物的转移技术将石墨烯片沉积在其顶部，并用石墨烯薄片制造了霍尔杆装置。设备制造后，再次使用STM在UHV条件下研究石墨烯薄片，并表明表面质量得以保留。电气传输测量在磁场的低温下进行，显示了石墨烯通道中载体类型和密度的后门调制，并显示出弱定位的发生。在这些实验条件下，未检测到后门和石墨烯通道之间的泄漏电流。
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected.
