论文标题
HGTE量子井中的二维拓扑绝缘子的微波光切除率
Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well
论文作者
论文摘要
HGTE量子绝缘子在HGTE量子孔中具有倒置频谱的微波光切除率已在辐射下以110-169 GHz的频率进行了实验研究。已经揭示了两种形成这种光的机制。第一种机制是由于边缘电流状态的分散分支之间的过渡引起的，而第二个机制是由辐射对大部分量子井的作用引起的。
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
