论文标题
在良好的障碍散射电位中，低反射率低或低碳
Low reflection at zero or low-energies in the well-barrier scattering potentials
论文作者
论文摘要
反射的概率$ r（e）$减少了有限的有吸引力的散射潜力，通常应该是1。但是，当$ r（0）= 0 $ r（0）= 0 $ r（0）= 0 $ r（0）<1 $，当有效的参数$ Q Q $ Q $ Q $时，具有矛盾的结果。在这里，我们报告了另一类有限潜力，这些有限电位是驻利式（有吸引力的）类型，并且可以使$ Q $的低值频带在零和低能量下具有较少的反射。这些良好的级势势只有两个真实的转折点（v_ {min}，v_ {max}）$，除了$ e = 0 $。我们提出了两个准确解决的方法和两个数值求解的模型，以确认这一现象。
Probability of reflection $R(E)$ off a finite attractive scattering potential at zero or low energies is ordinarily supposed to be 1. However, a fully attractive potential presents a paradoxical result that $R(0)=0$ or $R(0)<1$, when an effective parameter $q$ of the potential admits special discrete values. Here, we report another class of finite potentials which are well-barrier (attractive-repulsive) type and which can be made to possess much less reflection at zero and low energies for a band of low values of $q$. These well-barrier potentials have only two real turning points for $E \in(V_{min}, V_{max})$, excepting $E=0$. We present two exactly solvable and two numerically solved models to confirm this phenomenon.
