论文标题
在电化学蚀刻的FESE/LAALO $ _3 $胶片中增强过渡温度的过渡温度
Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films
论文作者
论文摘要
在这项研究中，我们研究了具有电化学蚀刻的FESE膜中$ t _ {\ mathrm c} $的栅极电压依赖性，具有带电双层晶体管结构。 $ t _ {\ mathrm c}^{\ mathrm {Zero}} $具有较低门电压的蚀刻FESE膜的值（$ v _ {\ Mathrm G} $ = 2.5和3.3 V）达到了46 K，这是从电阻衡量的几乎所有报道的值中的最高值。即使在放电过程后，这种增强的$ t _ {\ mathrm c} $即使在没有蚀刻过程的情况下的静电掺杂结果也保持不变。我们的结果表明，$ t _ {\ mathrm c} $增加的起源不是静电掺杂，而是蚀刻膜表面的电化学反应。
In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
