论文标题
低于60 mV/十年通过高能电子隧道开关纳米级氮化壳晶体管晶体管
Sub-60 mV/decade switching via high energy electrons tunneling in nanoscale gallium nitride field-effect transistors
论文作者
论文摘要
已经证明，新型设备，例如隧道效果晶体管（FET）和铁电FET，可以打破阈值摇摆（SS）限制（SS）限制，以低于60 mV/十年的交换，以进一步的低电压/低电源应用。在本文中，首先在Inaln/GAN高电子迁移式晶体管（HMETS）中观察到低于60 mV/DEC的SS：在三个数量级上，平均Ss为30 mV/dec的漏水量（IDS）和最小点15 mV/dec的最低点ss ss ss的平均ss在Inaln/gan/gan n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n量为15 mv/dec。发现SS随着排水源电压（VD）和LG降低，当LG <100 nm时，SS降低了60 mV/dec。随着设备尺寸向下扩展，SS的减小归因于从通道到表面的高能电子的隧穿。随着纳米级门的长度，SS降低，显示了将在未来的逻辑开关中应用的inaln/gan hemts的巨大潜力。
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this paper, SS of sub-60 mV/dec was firstly observed in InAlN/GaN high electron mobility transistors (HMETs): an average SS of 30 mV/dec over three orders of magnitude in drain-source (Ids) and a minimum point-by-point SS of 15 mV/dec were achieved in the InAlN/GaN HEMTs with gate length (Lg) of 40 nm. It is found that SS decreases with drain-source voltage (Vds) as well as Lg, and falls below 60 mV/dec when Lg < 100 nm. The decrease of SS as the device dimension scales down is attributed to the tunneling of high energy electrons from channel to the surface. The SS decreasing with the nanoscale gate length shows the great potential of the InAlN/GaN HEMTs to be applied in future logic switches.
