论文标题
碳纳米管内的一维过渡金属的有效生长和表征
Efficient Growth and Characterization of One Dimensional Transition Metal Tellurides Inside Carbon Nanotubes
论文作者
论文摘要
原子上薄的一维（1D）范德华瓦尔斯电线已经预计是集成纳米电子学的有希望的构建块。在过去的几十年中，虽然TMM纳米线的可靠生产使科学家们避免了科学家，但我们终于在碳纳米管内部（CNT）表现出了底部的软体纳米线的底部制造。尽管如此，当前的合成方法仍基于反应性MOTE2的真空退火，并限制了对各种TMM的访问。在这里，我们报告了一个扩展的框架，用于高产合成1D柜子的高产，其中包括WTE，这是一个前所未有的TMM家族。实验和理论分析表明，选择合适的金属氧化物作为前体的选择为其表征提供了有用的产率。这些TMM纳米线在可见光区域表现出显着的光吸收。更重要的是，可以通过封装不同的TMM纳米线来调整CNT的电子特性。
Atomically thin one dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe2, and limits access to a variety of TMMs. Here we report an expanded framework for high yield synthesis of the 1D tellurides including WTe, an unprecedented family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.
