论文标题

理解,量化和控制半导体聚合物的分子排序:从新手到专家到无定形再到完美的晶体

Understanding, Quantifying, and Controlling the Molecular Ordering of Semi-conducting Polymers: From Novices to Experts and Amorphous to Perfect Crystals

论文作者

Peng, Zhengxing, Ye, Long, Ade, Harald

论文摘要

半导体聚合物的分子填料,结晶度和质地通常对性能至关重要。尽管存在框架工作以量化排序,但解释通常只是定性的,导致对术语的不精确和自由使用。在这里,我们重点强调了分子订购程度的连续性,并主张说,用于结晶度,半矩阵,paracryStallinity,paracryStallinity,Crystallite/Crystallite/Crystallite/Crentallite/Crentrice和相关特征的术语更细微和一致。我们的一部分是由于对术语的不准确和不一致的使用,以及需要提出底漆或教程来教新小组成员的必要性。我们表明,通过结合放牧的广角X射线散射和差异扫描量热法可以实现更深入的理解。我们基于基于二晶疾病参数(G)的分子顺序的定量分析,将广泛的代表性聚合物分为四个建议的类别。为超过10种代表性的共轭和绝缘聚合物提供了一个小数据库,从无定形到半石。最后,我们概述了理性设计完美的聚合物晶体的挑战,并提出了一种新的分子设计方法,该方法设想了概念性分子移植,类似于经典(化合物)半导体中的紧张且未经培训的异质性epitaxy。

Molecular packing, crystallinity, and texture of semiconducting polymers are often critical to performance. Although frame-works exist to quantify the ordering, interpretations are often just qualitative, resulting in imprecise and liberal use of terminology. Here, we reemphasize the continuity of the degree of molecular ordering and advocate that a more nuanced and consistent terminology is used with regards to crystallinity, semicyrstallinity, paracrystallinity, crystallite/aggregate, and related characteristics. We are motivated in part by our own imprecise and inconsistent use of terminology and the need to have a primer or tutorial reference to teach new group members. We show that a deeper understanding can be achieved by combining grazing-incidence wide-angle X-ray scattering and differential scanning calorimetry. We classify a broad range of representative polymers into four proposed categories based on the quantitative analysis of molecular order based on the paracrystalline disorder parameter (g). A small database is presented for over 10 representative conjugated and insulating polymers ranging from amorphous to semicrystalline. Finally, we outline the challenges to rationally design perfect polymer crystals and propose a new molecular design approach that envisions conceptual molecular grafting that is akin to strained and unstrained hetero-epitaxy in classic (compound) semiconductors thin film growth.

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