论文标题

手性多率半含量的线性和非线性光学响应

Linear and nonlinear optical responses in the chiral multifold semimetal RhSi

论文作者

Ni, Zhuoliang, Xu, B., Sanchez-Martinez, M. A., Zhang, Y., Manna, K., Bernhard, C., Venderbos, J. W. F., de Juan, F., Felser, C., Grushin, A. G., Wu, Liang

论文摘要

手性拓扑半学是破坏反转和镜像对称性的材料。他们拥有有趣的现象,例如量化的圆形光钙效应(CPGE)和手性磁效应。在这项工作中,我们报告了手性拓扑半学RHSI的线性和非线性光学响应的​​全面理论和实验分析,该响应已知可以容纳多form式费米子。我们表明,光导率的特征特征可以与不同种类的多胎费米子的激发相关联,它们在0.4 eV上方和低于0.4 eV上都显示出两个不同的准线性状态。 CPGE的特征特征在0.4 eV处显示符号变化,并且在0.7 eV处的大约160 $μ\ textrm {a v}^{ - 2} $的大型非量化响应峰可以通过假设化学势在布里远的平面孔带上横跨布里鲁因区域中心的平坦孔带。我们的理论预测,为了观察RHSI中的量化CPGE,有必要增加化学势以及准粒子寿命。更广泛地说,我们的方法论,尤其是宽带Terahertz发射光谱的发展,可以广泛应用于以无线接触方式研究非中心对称材料和拓扑绝缘体中的光 - 气和效应,并加速基于拓扑半学的有效红外检测器的技术开发。

Chiral topological semimetals are materials that break both inversion and mirror symmetries. They host interesting phenomena such as the quantized circular photogalvanic effect (CPGE) and the chiral magnetic effect. In this work, we report a comprehensive theoretical and experimental analysis of the linear and non-linear optical responses of the chiral topological semimetal RhSi, which is known to host multifold fermions. We show that the characteristic features of the optical conductivity, which display two distinct quasi-linear regimes above and below 0.4 eV, can be linked to excitations of different kinds of multifold fermions. The characteristic features of the CPGE, which displays a sign change at 0.4 eV and a large non-quantized response peak of around 160 $μ\textrm{A V}^{-2}$ at 0.7 eV, are explained by assuming that the chemical potential crosses a flat hole band at the Brillouin zone center. Our theory predicts that, in order to observe a quantized CPGE in RhSi, it is necessary to increase the chemical potential as well as the quasiparticle lifetime. More broadly our methodology, especially the development of the broadband terahertz emission spectroscopy, could be widely applied to study photo-galvanic effects in noncentrosymmetric materials and in topological insulators in a contact-less way and accelerate the technological development of efficient infrared detectors based on topological semimetals.

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