论文标题
GAAS的辐射硬度：CR和SI传感器受电子束照射
Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam
论文作者
论文摘要
在高能量物理和其他应用领域中使用基于高电阻铬补偿的GAA（GAAS：CR）的辐射探测器的兴趣一直在稳步增长，因为它比其他经典材料具有众多优势。室温下的高辐射硬度脱颖而出，需要系统地研究。在本文中，提出了对Linac-200 Accelerator生成的20.9 MeV电子对GAAS的某些特性的20.9 MEV电子的实验研究。同时，在相同条件下辐照SI传感器，测量和分析以进行比较研究。目标传感器用高达1.5 MGY的剂量照射。以不同的吸收剂量测量电流 - 电压特性，电阻率，电荷收集效率及其对偏置电压和温度的依赖。文章中介绍了导致GAAS：CR传感器中观察到效应的可能的微观机制的分析。
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.
