论文标题

纳米晶体钻石膜的结构,拉曼和光致发光研究:原料中氨的影响

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

论文作者

Ganesan, K., Ajikumar, P. K., Srivatava, S. K., Magudapathy, P.

论文摘要

在本文中,我们报告了最佳N掺杂纳米晶钻(NCD)膜的结构质量和增强光致发光(PL)发射的增强。纯和N掺杂的纳米晶钻膜是通过使用NH3:CH4:H2在不同的名义N/C比率下通过热丝化学蒸气沉积在Si上合成的。原料中的0、0.13、0.35、0.50和0.75。 X射线衍射分析揭示了系统的初始增加,然后在原料中使用N/C比的结晶石大小减小。此外,拉曼线宽度和钻石带的峰位置的单调增加表明,钻石晶格中的压缩应变随着N/C比的函数的增加,最高为0.50。但是,在较高的N/C比为0.75时,压缩应变会稍微放松一点,并产生较低的应变。此外,观察到在1195 cm-1处的独特拉曼模式,对应于C = N-H振动,表明NCD膜中的N浓度显着。此外,可见和紫外线PL研究揭示了几个相关的颜色中心的存在,其多个发射线在380至700 nm的范围内。原料中N/C比为0.35生长的最佳N掺杂钻石膜显示出约505和700 nm的室温PL发射的显着增强。该PL增强分别归因于H3和N相关缺陷中心的其他聚集体,分别在355和532 nm激光激发下。

Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm-1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N related color centres with multiple emission lines in the range of 380 to 700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at about 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

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