论文标题

具有自组装的GE Nanoislands的SI结构中连续体的光子结合状态

Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands

论文作者

Dyakov, Sergey A., Stepikhova, Margarita V., Bogdanov, Andrey A., Novikov, Alexey V., Yurasov, Dmitry V., Krasilnik, Zakhary F., Tikhodeev, Sergei G., Gippius, Nikolay A.

论文摘要

锗自组装的纳米岛和量子点对于CMOS兼容的光电集成电路非常有前途,但是它们的发光强度仍然不足以用于许多实际应用。在这里,我们通过实验证明,由于连续体中边界状态的发射过程的参与,可以显着增强硅光子晶体平板中Ge Nanoislands的光致发光。与非结构化样本面积相比,我们在实验上证明了两个以上的数量级光致发光增强和一个以上的数量级集成PL增强。从理论上讲,我们通过散射矩阵形式的傅立叶模态方法研究了这种效果,并证明了光子晶体平板中准正常指导模式的出现。我们还用群体理论来描述他们的对称性。我们的工作为与硅技术兼容的新一类光电组件铺平了道路。

Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their luminescence intensity is still insufficient for many practical applications. Here, we demonstrate experimentally that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum. We experimentally demonstrate more than two orders of magnitude peak photoluminescence enhancement and more than one order of magnitude integrated PL enhancement in a photonic crystal slab compared with the non-structured sample area. We theoretically study this effect by the Fourier modal method in the scattering matrix form and demonstrate the appearance of quasi-normal guided modes in our photonic crystal slab. We also describe their symmetry in terms of group theory. Our work paves the way towards a new class of optoelectronic components compatible with silicon technology.

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