论文标题
2.5-kV Algan/Gan Schottky屏障二极管二极管二极管二极管二极管带有嵌入式阳极结构
2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure
论文作者
论文摘要
在这封信中，我们证明了具有嵌入式阳极结构的Si基板上的高性能横向Algan/Gan Schottky屏障二极管（SBD）。优化的快速蚀刻工艺可通过0.26 nm的凹入表面粗糙度改善蚀刻质量。通过将高功函数金属PT用作Schottky电极，对于40个设备，可获得0.71 V的低von，高均匀性为0.023 V。在平坦的阳极凹面表面和相关的现场板设计的支持下，具有15 UM的阳极线间距的SBD设备仅显示Ron，SP仅为1.53 MOHM.CM2，击穿电压可以达到1592 V，而高功率FOM（居住图）为1656 MW/CM2。对于具有30 UM的阳极线间距的SBD设备，故障电压可以高达2521 V，功率FOM为1244 MW/cm2。
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, the breakdown voltage can reach 1592 V with a high power FOM (Figure-of-Merit) of 1656 MW/cm2. For the SBD device with the anode-cathode spacing of 30 um, the breakdown voltage can be as high as 2521 V and the power FOM is 1244 MW/cm2.
