论文标题
增强的宽带光响应于在硅旋晶石上制造的部分悬浮的水平水平阵列的水平阵列
Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers
论文作者
论文摘要
我们报告了一个高响应性的宽带光探测器在波长范围内在400 nm至1100 nm的波长范围内，在硅启动器（SOI）晶圆上制造的Si Microlines（线宽度〜1微米）的水平阵列中。阵列是使用等离子体蚀刻，湿蚀刻和电子束光刻的组合制成的。它在SOI上形成了部分悬浮（几乎是免费的）硅微结构。该设备的全部照明下的阵列检测器在800 nm处显示出18 a/w的峰值响应性，偏置为1V，这超出了商业SI检测器中响应率的数量级。在400 nm至1000 nm的宽带中，检测器的响应性超过10a/w。我们发现，对于获得如此高的响应性，必须在阵列中的微线悬浮液。悬浮液从大部分晶片中分离出微丝线，并通过氧化物层抑制载体重组，从而增强光反应。通过仿真验证了这一点。通过使用阵列单个微丝线的选定部分的聚焦照明，我们可以隔离微烯的不同部分对光电的贡献。
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.
