论文标题
通过2D原子晶体受体调节掺杂
Modulation Doping via a 2d Atomic Crystalline Acceptor
论文作者
论文摘要
二维（2D）纳米电子，等离子间和新兴阶段需要清洁和局部电荷控制，要求分层，结晶受体或供体。我们的拉曼，光电压和电导电导测量与\ textit {ab intibiO}计算结合了$α$ -rucl $ _3 $启用剥落的化学蒸气，化学蒸气沉积（CVD）和分子束表皮（MBE）的材料的较大的工作函数和窄带。短距离的侧向掺杂（$ {\ leq} 65 \ \ text {nm} $）和高均质性在具有单层\ arucl的近距离材料中实现。这导致在这些高孔密度（$ 3 \ times10^{13} {13} {13} \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \\ text {cm}^{cm}^{ - 2} $）处，导致最高的单层石墨烯（MLG）迁移率（$ 4,900 \ \ text {cm}^2/ \ text {vs} $）并产生更大的电荷转移到BiLayer石墨烯（BLG）（$ 6 \ times10^{13} \ \ text {cm}^{ - 2} $）。我们进一步证明了原理光学传感，通过扭转角度控制以及通过六角硼（HBN）的电荷转移。
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
