论文标题
通过活动梯度对拓扑缺陷的比对
Alignment of a topological defect by an activity gradient
论文作者
论文摘要
作为控制活性材料的方法，研究人员建议在基板上设计活动模式，这应该指导拓扑缺陷的运动。为了调查这个概念，我们对拓扑电荷的单个缺陷$+1/2 $的行为进行建模，并以活动梯度移动。该建模使用三种方法：（1）流体动力方程的近似分析解，（2）基于宏观的，基于对称性的缺陷理论作为有效的粒子，以及（3）数值模拟。所有三种方法都表明，活动梯度使缺陷方向对齐，因此对于控制缺陷运动应该很有用。
As a method for controlling active materials, researchers have suggested designing patterns of activity on a substrate, which should guide the motion of topological defects. To investigate this concept, we model the behavior of a single defect of topological charge $+1/2$, moving in an activity gradient. This modeling uses three methods: (1) approximate analytic solution of hydrodynamic equations, (2) macroscopic, symmetry-based theory of the defect as an effective oriented particle, and (3) numerical simulation. All three methods show that an activity gradient aligns the defect orientation, and hence should be useful to control defect motion.
