论文标题
二维半导体中的激子莫特过渡
Exciton Mott Transition in Two-Dimensional Semiconductors
论文作者
论文摘要
激子多体相互作用对在高级光子设备以及量子科学和技术（例如量子计算）中的应用中具有很大的影响，但是对激子多体相互作用的基本了解非常有限。在这里，我们提供了一些新的见解，以了解激子多体相互作用的基本原理，这是通过像电子孔和孔（EHP）相同的二维纪念碑（2d ddd）的独特属性（2D）的独特属性（2d dd）的唯一属性（EHP）的等离子体（即电子孔等离子体（EHP））所证明的。我们阐明了有关EMT的连续性和标准的长期争议，量化了共存激子和EHP相之间的电荷载体分布，建立了EHP的发射特征和EHP电荷密度之间的相关性，并阐明EHP电荷载体的物理状态为Nanoscale Electon-Hole-Hole-Hole-Hole-Hole-Hole-Hole-hole-hole-hole-hole-hole-hole-hole-hole-hole-hole-hole hole hole络合物。这些结果为促进激子多体相互作用的研究以及利用量子科学/技术的相互作用以及先进的光电设备的开发而奠定了基础。
Exciton many-body interaction bear great implication for application in advanced photonic devices and quantum science and technology such as quantum computing, but the fundamental understanding about exciton many-body interaction is very limited. Here we provide numerous new insights into the fundamentals of exciton Mott transition (EMT), a manifestation of exciton many-body interaction evidenced by the ionization of excitons into a plasma of unbound electrons and holes, i.e. electron-hole plasma (EHP), by taking advantage of the unique properties of two-dimensional (2D) semiconductors like monolayer MoS2. We clarify long-standing controversies on the continuousness and criteria of EMT, quantify the charge carrier distribution among the co-existing exciton and EHP phases, establish correlation between the emission features and charge densities of EHP, and elucidate the physical state of EHP charge carriers as nanoscale electron-hole complex rather than individually free charges. These results lay down a foundation for furthering the studies of exciton many-body interaction and also for utilizing the interaction in quantum science/technology and the development of advanced optoelectronic devices.
