论文标题
拓扑绝缘子表面上的狄拉克量子井工程
Dirac quantum well engineering on the surface of topological insulator
论文作者
论文摘要
我们研究了一个量子孔，该孔由夹在两个微不足道的绝缘子之间的薄拓扑绝缘子组成。更具体地说，我们考虑了这些不同类型的材料之间的平滑接口，以使接口不仅具有手性界面状态，其存在的存在是由散装的对应关系决定的，而且还具有巨大的Volkov-Pankratov状态。我们研究了这些界面状态之间可能的杂交，这是拓扑材料的宽度和特征界面大小的函数。最明显的是，我们发现对手性界面状态的极弱作用与大规模的Volkov-Pankratov状态的更常见的杂交之间存在很大的质量差异，这些杂交可以通过在（DIRAC）量子的模型的框架中以量子隧穿的方式轻松理解，我们在这里引入。
We investigate a quantum well that consists of a thin topological insulator sandwiched between two trivial insulators. More specifically, we consider smooth interfaces between these different types of materials such that the interfaces host not only the chiral interface states, whose existence is dictated by the bulk-edge correspondence, but also massive Volkov-Pankratov states. We investigate possible hybridization between these interface states as a function of the width of the topological material and of the characteristic interface size. Most saliently, we find a strong qualitative difference between an extremely weak effect on the chiral interface states and a more common hybridization of the massive Volkov-Pankratov states that can be easily understood in terms of quantum tunneling in the framework of the model of a (Dirac) quantum well we introduce here.
