论文标题
配体依赖性氧化决定了高效率PBS量子点太阳能电池的性能演变
Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells
论文作者
论文摘要
硫化铅(PBS)量子点(QD)光伏的效率令人印象深刻,使其对未来的应用特别有希望。像许多其他类型的新兴光伏设备一样,它们的环境不稳定性仍然是该技术的致命弱点。在这项工作中,我们证明了暴露于氧化环境的PBS QD中的降解过程与配体的选择密切相关,而不是其内在特性。特别是,我们证明,尽管1,2-乙酰硫醇(EDT)配体会导致PBS的显着氧化,但铅碘/铅/铅溴化物(PBX2)涂层PBS QDS QDS没有显示出氧化或降解的迹象。因此,由于前者普遍存在用作QD太阳能电池中的孔提取层,因此主要负责设备性能演化。 EDT-PBS QD的氧化导致有效QD大小显着降低,这触发了两个竞争过程:改善的能量对齐,可以增强电子阻断,但通过层降低了电荷传输。在早期,前一个过程占主导地位,导致了通常报告的,但到目前为止尚未完全解释性能的初始提高,而后者则控制着降解和光伏性能的恶化。我们的工作强调,通过适当选择所有设备组件的配体选择,PBS量子点太阳能电池的稳定性可以显着增强。
Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental instability remains the Achilles heel of this technology. In this work, we demonstrate that the degradation processes in PbS QDs which are exposed to oxygenated environments are tightly related to the choice of ligands, rather than their intrinsic properties. In particular, we demonstrate that while 1,2-ethanedithiol (EDT) ligands result in significant oxidation of PbS, lead iodide/lead bromide (PbX2) coated PbS QDs show no signs of oxidation or degradation. Consequently, since the former is ubiquitously used as a hole extraction layer in QD solar cells, it is predominantly responsible for the device performance evolution. The oxidation of EDT-PbS QDs results in a significantly reduced effective QD size, which triggers two competing processes: improved energetic alignment that enhances electron blocking, but reduced charge transport through the layer. At early times, the former process dominates, resulting in the commonly reported, but so far not fully explained initial increase in performance, while the latter governs the onset of degradation and deterioration of the photovoltaic performance. Our work highlights that the stability of PbS quantum dot solar cells can be significantly enhanced by an appropriate choice of ligands for all device components.