论文标题
通过分子束外延生长的自辅助GAAS纳米线的Wurtzite相控制
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
论文作者
论文摘要
III-V半导体纳米线（NWS）中晶相的准确控制是设备应用的重要里程碑。在这项工作中，我们提出了一种在自辅助NWS中选择和维持Wurtzite（WZ）晶相的方法。通过选择一个特定的状态，其中NW增长过程是一个自调节系统，选择锌 - 蓝色（ZB）或WZ相的主要实验参数是V/III通量比。可以通过更改AS通量来监测后者，并在GA液滴的润湿角以目标间隔掉落时，将系统驱动到固定状态，通常在90°-125°范围内，以实现WZ相的生长。对原位Rheed进化的分析，高分辨率扫描传输电子显微镜（HRSTEM），暗场传输电子显微镜（DF-TEM）和光致发光（PL）数据均证实了较长的少数微米长的纯纯WZ段，该pure fl of v/iiii flux falux fallux fallux fall vails nws nws获得了MBE增长。
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and maintain the wurtzite (WZ) crystal phase in self-assisted NWs. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the zinc-blende (ZB) or WZ phase is the V/III flux ratio. The latter can be monitored by changing the As flux, and drives the system toward a stationary regime when the wetting angle of the Ga droplet falls in a target interval, typically in the 90° - 125° range for the WZ phase growth. The analysis of the in situ RHEED evolution, high-resolution scanning transmission electron microscopy (HRSTEM), dark field transmission electron microscopy (DF-TEM), and photoluminescence (PL) data all confirm the control of an extended few micrometers long pure WZ segment obtained by MBE growth of self-assisted GaAs NWs with a V/III flux ratio of 4.0.
