论文标题
确定MOSFET阈值电压的广义恒定电流方法
Generalized Constant Current Method for Determining MOSFET Threshold Voltage
论文作者
论文摘要
提出了一种用于提取具有恒定电流偏置在所有反转级别的MOSFET的阈值电压和底物效应参数的新方法。这种广义的恒定电流（GCC）方法利用基于电荷的MOSFET模型提取阈值电压和其他底物效应相关参数。该方法适用于整个弱和中度反转的广泛电流，并且在某种程度上是在强大的反转中。当使用浅沟隔离（STI）中，在CMOS过程中呈现边缘传导效果（STI）的MOSFET时，此方法特别有用。
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using Shallow Trench Isolation (STI).
