论文标题

半导体和等离子纳米结构及其杂种的超快光谱

Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids

论文作者

Catone, Daniele, Di Mario, Lorenzo, Martelli, Faustino, O'Keeffe, Patrick, Paladini, Alessandra, Cresi, Jacopo Stefano Pelli, Sivan, Aswathi K., Tian, Lin, Toschi, Francesco, Turchini, Stefano

论文摘要

纳米结构中载体动力学的知识对于(Opto)电子设备的开发至关重要。对于半导体纳米结构以及等离子纳米颗粒(NP)是正确的。实际上,通过结合半导体和等离子纳米结构来提高光催化效率是深入研究其超快动力学的原因之一。在这项工作中,我们将回顾我们在最近建立的Eurofel支持实验室进行的纳米结构中超快光谱的活动。我们已经研究了溶液中金属NP在溶液和2D和3D阵列中的动态等离子体响应,特别注意纳米颗粒形状的影响以及将吸收光在纳米含量的刻度上转化为热量。我们将总结纳米结构的钙壶载体动力学获得的结果,重点是热载体动力学和半导体纳米系统(例如ZnSe和Si纳米线)中的结果,特别关注带隙漂白动力学。随后,对半导体 - 金属NP杂种的研究,例如CEO $ _2 $ -AG NPS,ZNSE-AG NPS和ZNSE-AU NPS,允许讨论相互作用机制,例如电荷载体传递和F {Ö} rster相互作用。最后,我们通过讨论TIO $ _2 $ NPS的载体动力学与V-Doped Tio $ _2 $ NPS及其催化性能之间的关系,评估了将宽带隙半导体敏化对可见光的替代方法。

The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively studied. In this work, we will review our activity on ultrafast spectroscopy in nanostructures carried out in the recently established EuroFEL Support Laboratory. We have investigated the dynamical plasmonic responses of metal NPs both in solution and in 2D and 3D arrays on surfaces, with particular attention being paid to the effects of the nanoparticle shape and to the conversion of absorbed light into heat on a nano-localized scale. We will summarize the results obtained on the carrier dynamics in nanostructured perovskites with emphasis on the hot-carrier dynamics and in semiconductor nanosystems such as ZnSe and Si nanowires, with particular attention to the band-gap bleaching dynamics. Subsequently, the study of semiconductor-metal NP hybrids, such as CeO$_2$-Ag NPs, ZnSe-Ag NPs and ZnSe-Au NPs, allows the discussion of interaction mechanisms such as charge carrier transfer and F{ö}rster interaction. Finally, we assess an alternative method for the sensitization of wide band gap semiconductors to visible light by discussing the relationship between the carrier dynamics of TiO$_2$ NPs and V-doped TiO$_2$ NPs and their catalytic properties.

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