论文标题

分子束外延生长和SR1-XNDXCUO2铜膜的表面结构

Molecular beam epitaxy growth and surface structure of Sr1-xNdxCuO2 cuprate films

论文作者

Fan, Jia-Qi, Wang, Shu-Ze, Yu, Xue-Qing, Wang, Rui-Feng, Xiong, Yan-Ling, Song, Can-Li, Ma, Xu-Cun, Xue, Qi-Kun

论文摘要

我们通过结合臭氧辅助分子束外观和原位扫描隧道显微镜,在SRTIO3(001)底物上报道了无限层铜层SR1-XNDXCUO2膜的外延生长和表面结构。仔细的底物温度和通量控制已被用于实现单相,化学计量和面向C轴的膜。膜的表面通常以混合的CUO2表面和网格样的上层建筑为特征。上层建筑的周期性为3.47 nm,对应于叠加剂过氧化物SRO2和基础CUO2平面之间的巧合晶格,并引起了与CUO2的Mott-Hubbard带结构不同的电导频谱。在较高的ND组成x> 0.1下,出现了孔掺杂的CuO2的A(2 x 2)表面特征,我们将其归因于中间的SR平面中的根尖氧的摄入。

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate temperature and flux control has been used to achieve single-phase, stoichiometric, and c-axis oriented films. The surface of the films is usually characterized by a mixed CuO2 surface and gridlike superstructure. The superstructure exhibits a periodicity of 3.47 nm that corresponds to a coincidence lattice between the overlayer peroxide SrO2 and underlying CuO2 plane, and gives rise to a conductance spectrum that is distinct from the Mott-Hubbard band structure of CuO2. At a higher Nd composition x > 0.1, a (2 x 2) surface characteristic of the hole-doped CuO2 emerges, which we ascribe to the intake of apical oxygens in the intervening Sr planes.

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