论文标题
无窗的硅雪崩光二极管对90-900 eV范围中电子的响应
Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range
论文作者
论文摘要
我们报告了无窗硅雪崩光二极管对90-900 eV能量范围中电子的响应的表征。这些电子是由罗马大学LASEC实验室中存在的一单元电子枪提供的。我们发现，雪崩光二极管会产生与击中其活性表面的电子电流成比例的电流。发现增益取决于电子能量$ e_e $，并且从$ 2.147 \ pm 0.027 $（对于$ e_e = 90 $ ev）到$ 385.8 \ pm 3.3 $（对于$ e_e = 900 $ ev），当时以$ v_ {apd av} = 350 $ v.的偏见时，是第一个sile sile sile sile sile sile sile sile sile sile，用$ e_e <1 $ kev来测量电子。
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.} This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e < 1$ keV.
