论文标题
基于HFO2的堆栈中异常挥发性/非易失性转换的合理物理机制
Plausible physical mechanisms for unusual volatile/non-volatile resistive switching in HfO2-based stacks
论文作者
论文摘要
由硅兼容的简单氧化物制成的回忆设备对于将来适应性的电子设备和非数字计算应用中的存储和逻辑设备引起了极大的兴趣。在原子沉积的基于Hafnia的堆栈中观察到的一系列高度理想的特性引发了我们的兴趣，以调查其对技术实施的适用性。在本文中，我们报告了在提出的潜在机制框架内重现观察到的行为的尝试。无法实现原始批次的电响应的能力表明，这些设备中的关键方面仍未被发现。通过将新制造的设备与原始设备进行比较，我们收集了一些可行的替代机制的线索，这些线索可能会导致可比的电行为。
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report our attempts to reproduce the observed behaviour within the framework of a proposed underlying mechanism. The inability of achieving the electrical response of the original batch indicates that a key aspect in those devices has remained undetected. By comparing newly made devices with the original ones, we gather some clues on the plausible alternative mechanisms that could give rise to comparable electrical behaviours.
